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Cross-plane heat conduction in nanoporous silicon thin films by phonon Boltzmann transport equation and Monte Carlo simulations
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文摘
A model for cross-plane thermal conductivity of nanoporous films is proposed by BTE. Our model captures the effects for thickness, pore radius and porosity simultaneously. A MC method is developed to simulate phonon transport in nanoporous Si films. Good agreements between the present model and MC simulations have been achieved.

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