Performances of transparent indium zinc oxide thin film transistors using ZrO₂ as dielectric processed by solution method

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• 作者：Jun Wei Zhao ; Xin An Zhang ; Shuang Li ; Hai Wu Zheng ; Guang Yang and Wei Feng Zhang
• 刊名：physica status solidi (a)
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：214
• 期：1
• 全文大小：836K
• ISSN：1862-6319

文摘

We report here the electrical and UV-photoelectrical performance of transparent indium zinc oxide (IZO) thin film transistors with solution-processed zirconia (ZrO₂) dielectric. The channel layers were deposited by magnetron sputter at room temperature. The ZrO₂ dielectric was deposited by solution process under ambient conditions followed by low temperature annealing. The films were structurally characterized by X-ray diffraction and atomic force microscope. Good device characteristics have been obtained with a field effect mobility of 30.7 cm² V⁻¹s⁻¹, a current on/off ratio of 10⁵, a threshold voltage of 0.8 V, and a sub-threshold swing of 30 mV decade⁻¹. A resistor-load inverter was fabricated and shows reasonable transfer characteristics with a gain of about 5 at supply voltage of 2 V. It was observed that the transistors are sensitive to UV illumination. When exposed to ultraviolet light with an intensity of 120 µW cm⁻², the photo-to-dark current ratio was more than 10⁴ in the depletion region. All the above features make IZO thin film transistor a promising candidate to be also used as a UV-photo transistor.