Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

详细信息    查看全文

• 作者：Kenichi Ishii ; Shuhei Yagi and Hiroyuki Yaguchi
• 刊名：physica status solidi (b)
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：254
• 期：2
• 全文大小：649K
• ISSN：1521-3951

文摘

Cubic zincblende InN (c-InN) nanoscale dot arrays are grown on cubic GaN (c-GaN) by RF-molecular beam epitaxy using MgO (001) vicinal substrates oriented 3.5° toward [110]. The obtained dot arrays have longer ordering length compared with those grown using conventional on-axis (just) substrates. The c-GaN underlayer grown on the vicinal substrate exhibits a single-domain crystalline structure, while that grown on the just substrate is a mixture of two orthogonal crystalline domains. The change in the c-GaN domain structure leads to the enlarged domain size and lower density of domain boundaries on the c-GaN (001) surface in [1–10]. The longer ordering length of the c-InN dot on the vicinal substrates is reflected by the decrease in the c-GaN domain boundary that disrupts the lateral ordering of the dot arrays.