Faceted growth of ()-oriented GaN domains on an SiO₂-patterned m-plane sapphire substrate using polarity inversion

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• 作者：Hansub Yoon ; Miyeon Jue ; Dongsoo Jang and Chinkyo Kim
• 关键词：GaN ; semipolar ; polarity inversion ; hydride vapour-phase epitaxy ; electron microscopy
• 刊名：Journal of Applied Crystallography
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：50
• 期：1
• 页码：30-35
• 全文大小：873K
• ISSN：1600-5767

文摘

Heteroepitaxial growth of ()-oriented GaN domains on m-plane sapphire is energetically unfavourable in comparison with that of ()-oriented GaN domains, but the faceted domains with ()-oriented GaN reveal a more m-facet-dominant configuration than ()-oriented GaN in such a way that the quantum-confined Stark effect can be more effectively suppressed. It is reported here, for the first time, that semipolar ()-oriented and faceted GaN domains can be grown on an SiO₂-patterned m-plane sapphire substrate by employing polarity inversion of initially nucleated ()-oriented GaN domains. This polarity inversion of semipolar GaN was found to occur when the domains were grown with a 20–37.5 times higher V/III ratio and 70 K lower growth temperature than corresponding parameters for polarity-not-inverted domains. This work opens up a new possibility of effective suppression of the quantum-confined Stark effect by polarity-controlled semipolar GaN in an inexpensive manner in comparison with homoepitaxial growth of ()-oriented GaN on a GaN substrate.